Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최병덕 | - |
dc.date.accessioned | 2018-03-20T06:02:39Z | - |
dc.date.available | 2018-03-20T06:02:39Z | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52(3), UNSP 03BC01 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.7567/JJAP.52.03BC01/meta | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/49594 | - |
dc.description.abstract | In this paper, we propose an integrated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) gate driver circuit with parallely connected TFTs to resolve problems of the large circuit area and large number of input signals which are founded in the previously reported decoder-type and demultiplexer-type integrated gate drivers. The proposed gate driver can alleviate the demerits of previous gate drivers while maintaining their advantages: reduction of the threshold voltage (V-th) shift of the a-Si: H TFTs with an AC-driving structure and provide a stable low-impedance output. The key idea is to construct a novel decoder based on parallely connected TFTs instead of serially connected ones that are very common for decoders. The simulation results show that the rising time and falling time are 1.27 and 1.63 mu s respectively with -5 to 30 V output voltage swing which are suitable for high resolution active-matrix displays. (c) 2013 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This work was supported by the IT R&D program of MKE/KEIT (K1002182, TFT backplane technology for next generation display). This work was also supported by Brain Korea 21 Project and partially supported by IDEC. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND | en_US |
dc.subject | INSTABILITY MECHANISMS | en_US |
dc.subject | BIAS-STRESS | en_US |
dc.subject | DEPENDENCE | en_US |
dc.subject | TIME | en_US |
dc.subject | TFTS | en_US |
dc.title | Compact Decoder-Type Gate Driver Circuits with Hydrogenated Amorphous Silicon Thin Film Transistors for Active Matrix Displays | en_US |
dc.type | Article | en_US |
dc.relation.volume | 52 | - |
dc.identifier.doi | 10.7567/JJAP.52.03BC01 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Kim, JS | - |
dc.contributor.googleauthor | Park, GT | - |
dc.contributor.googleauthor | Kim, HW | - |
dc.contributor.googleauthor | Choi, BD | - |
dc.relation.code | 2013010434 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | bdchoi | - |
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