Macro-Model of Magnetic Tunnel Junction for STT-MRAM including Dynamic Behavior
- Title
- Macro-Model of Magnetic Tunnel Junction for STT-MRAM including Dynamic Behavior
- Author
- 유창식
- Keywords
- Macro model; magnetic tunnel junction (MTJ); spin transfer torque magnetic random access memory (STT MTJ); verilog-A
- Issue Date
- 2014-12
- Publisher
- IEEK Publication Center
- Citation
- Journal of Semiconductor Technology and Science, 2014, 14(6), P.728-732
- Abstract
- Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.
- URI
- http://www.dbpia.co.kr/Journal/ArticleDetail/NODE06093924
- ISSN
- 2233-4866; 1598-1657
- DOI
- 10.5573/JSTS.2014.14.6.728
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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