Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2018-03-19T08:35:41Z | - |
dc.date.available | 2018-03-19T08:35:41Z | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, 권: 150, 호: 20 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/abs/10.1063/1.4902244 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/49095 | - |
dc.description.abstract | In this paper, we investigated the interface band alignment of TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 (TiN/ZAZ) structures by analyzing the conduction band offset (CBO) and valence band offset at the electrode/dielectric interface using depth-resolved spectroscopy techniques. At the center of the interface, which is defined by the chemical composition depth profile, CBO values of 2.03 eV and 2.57 eV for ZrO2 and ZAZ were found, respectively. Subcutaneous TiON, which is induced by the process, was identified at this interface, and it played an important role in creating sub-band states. Based on combined analyses on both intrinsic and sub-band structures, a band alignment model is proposed. It was confirmed that the Al2O3 layer in ZAZ leads to a lowering of the Fermi energy or a p-doping effect, thereby increasing both the CBO and the tunneling barrier height in metal-insulator-metal capacitors. (C) 2014 AIP Publishing LLC. | en_US |
dc.description.sponsorship | This research was supported by the Samsung Electronics Industry-University research program, the Basic Science Program (NRF-2009-0094046) through the National Research Foundation (NRF) of MEST, Republic of Korea, and the Basic Science Program (NRF-2012R1A1A1005014) through the NRF funded by the Ministry of Science, ICT and Future Planning. This work was also partially supported by the Ajou university research fund. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA | en_US |
dc.subject | TiN/ZrO2 | en_US |
dc.subject | TiN/ZrO2-Al2O3-ZrO2 | en_US |
dc.subject | CBO | en_US |
dc.title | Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors | en_US |
dc.title.alternative | ZrO2 and TiN | en_US |
dc.type | Article | en_US |
dc.relation.no | 20 | - |
dc.relation.volume | 105 | - |
dc.identifier.doi | 10.1063/1.4902244 | - |
dc.relation.page | 201603-201603 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Lee, SangYeon | - |
dc.contributor.googleauthor | Chang, Jae-wan | - |
dc.contributor.googleauthor | Kim, Youn-soo | - |
dc.contributor.googleauthor | Lim, Han-Jin | - |
dc.contributor.googleauthor | Jeon, Hyeong-tag | - |
dc.contributor.googleauthor | Seo, Hyung-tak | - |
dc.relation.code | 2014025338 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
dc.identifier.researcherID | P-3193-2015 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-2502-7413 | - |
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