Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-03-19T04:31:04Z | - |
dc.date.available | 2018-03-19T04:31:04Z | - |
dc.date.issued | 2014-07 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS,v.14 No.7, p932-p935, 4p. | en_US |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S1567173914001175 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/48825 | - |
dc.description.abstract | Thin film transistors (TFTs) with indium zinc tin-oxide (IZTO) dual-channel layers were fabricated on heavily-doped p-type Si substrates by using a tilted dual-target radio-frequency magnetron sputtering system. The number of oxygen vacancies in the IZTO channel layer decreased with increasing oxygen partial pressure, resulting in a decrease in the conductivity. The threshold voltage (Vth) shifted toward positive gate-source voltage with increasing oxygen partial pressure for the growth of the IZTO layer because of a decrease in the carrier concentration. The Vth, the mobility, the on/off-current ratio, and the subthreshold swing of the dual-channel IZTO TFTs were 3.5 V, 7.1 cm(2)/V s, 13 V/decade, and 8.2 x 10(6), respectively, which was enhanced by utilizing dual-channel layers consisting of a top channel deposited at a high oxygen partial pressure and a bottom channel deposited at a low oxygen partial pressure. (C) 2014 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS | en_US |
dc.subject | Indium-zinc tin-oxide thin-film transistor | en_US |
dc.subject | Dual-channel layer | en_US |
dc.subject | Threshold voltage | en_US |
dc.subject | Oxygen partial pressure | en_US |
dc.title | Enhancement of the electrical characteristics of indium-zinctin-oxide thin-film transistors utilizing dual-channel layers | en_US |
dc.type | Article | en_US |
dc.relation.volume | 14 | - |
dc.identifier.doi | 10.1016/j.cap.2014.04.008 | - |
dc.relation.page | 932-935 | - |
dc.relation.journal | CURRENT APPLIED PHYSICS | - |
dc.contributor.googleauthor | Oh, Dohyun | - |
dc.contributor.googleauthor | Ahn, Joon Sung | - |
dc.contributor.googleauthor | Cho, Woon-Jo | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2014028061 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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