Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진섭 | - |
dc.date.accessioned | 2018-03-16T09:05:00Z | - |
dc.date.available | 2018-03-16T09:05:00Z | - |
dc.date.issued | 2013-09 | - |
dc.identifier.citation | Journal of nanoscience and nanotechnology, Vol.13 No.11 [2013], 7653-7657 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jnn/2013/00000013/00000011/art00079 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/48161 | - |
dc.description.abstract | We report the enhancement of the photoluminescence (PL) intensity of GaN-based light-emitting diode (LED) structures by using of a surface coating of polystyrene (PS)/silica (SiO2) core-shell nanospheres. PS/SiO2 core shell nanosphere-coated LEDs show the highest PL intensity among various type LEDs. The relative PL intensity of PS/SiO2 core-shell nanosphere coated LEDs increased by 100 and 14910 compared with that of LEDs coated with only SiO2 nanospheres and conventional LEDs without any nanostructures, respectively. Moreover the theoretically investigated results using finite difference time domain (FDTD) simulations show the 1,33 times improvement of total intensity integrated over the measured sample coated by PS/SiO2 core shell nanospheres than that of a conventional LED without the coating of nanospheres, which corresponds to the experimentally observed results. The enhancement in PL intensity using PS/SiO2 core shell nano structures can be attributed to the improvement in light extraction efficiency by both increasing the probability of light escape by reducing Freshet reflection and by multiple scattering within the core shell nanospheres. | en_US |
dc.description.sponsorship | This research was supported h Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (grant number R1A1A110314659) and by the Harryang University research fund (HY-2011-00000000229). | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Scientific Publishers | en_US |
dc.subject | Light-Emitting Diode | en_US |
dc.subject | Extraction Efficiency | en_US |
dc.subject | Core-Shell Nanostructures | en_US |
dc.title | Enhancement of Photoluminescence Intensity of GaN-Based Light-Emitting Diodes with Coated Polystyrene/Silica Core-Shell Nanostructures | en_US |
dc.title.alternative | Silica Core-Shell Nanostructures | en_US |
dc.type | Article | en_US |
dc.relation.volume | 13 | - |
dc.identifier.doi | 10.1166/jnn.2013.7821 | - |
dc.relation.page | 7653-7657 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Yeon, Seung-hwan | - |
dc.contributor.googleauthor | Park, Jin-sub | - |
dc.relation.code | 2013010833 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jinsubpark | - |
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