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dc.contributor.author박완준-
dc.date.accessioned2018-03-16T09:02:25Z-
dc.date.available2018-03-16T09:02:25Z-
dc.date.issued2013-09-
dc.identifier.citationJournal of nanoscience and nanotechnology, 2013, 13(11), P.7396-7400en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2013/00000013/00000011/art00032-
dc.description.abstractWet transfer is crucial for most device structures of the proposed applications employing single layer graphene in order to take advantage of the unique physical, chemical, bio-chemical and electrical properties of the graphene. However, transfer methodologies that can be used to obtain continuous film without voids, wrinkles and cracks are limited although film perfectness critically depends on the relative surface tension of wetting liquids on the substrate. We report the importance of wetting liquid in the transfer process with a systematic study on the parameters governing film integrity in single layer graphene grown via chemical vapor deposition. Two different suspension liquids (in terms of polar character) are tested for adequacy of transfer onto SiO2 and hexamethyldisiloxane (HMDS). We found that the relative surface tension of the wetting liquid on the surfaces of the substrate is related to transfer quality. In addition, dimethyl sulfoxide (DMSO) is introduced as a good suspension liquid to HMDS, a mechanically flexible substrate.en_US
dc.description.sponsorshipThis research was supported by KRF 14035195 and the Converging Research Center Program, funded by the Ministry of Education, Science and Technology.en_US
dc.language.isoenen_US
dc.publisherAmerican Scientific Publishersen_US
dc.subjectGraphene Transferen_US
dc.subjectSurface Energyen_US
dc.subjectPolar Energyen_US
dc.subjectWet Transferen_US
dc.titleThe Roles of Wetting Liquid in the Transfer Process of Single Layer Graphene Onto Arbitrary Substratesen_US
dc.typeArticleen_US
dc.relation.volume13-
dc.identifier.doi10.1166/jnn.2013.7864-
dc.relation.page7396-7400-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorKim, Ju-Hun-
dc.contributor.googleauthorYi, Jung-hwa-
dc.contributor.googleauthorJin, Hyeong-Ki-
dc.contributor.googleauthorKim, Un-Jeong-
dc.contributor.googleauthorPark, Wan-jun-
dc.relation.code2013010833-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidwanjun-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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