Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
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dc.contributor.author김태환-
dc.date.accessioned2018-03-16T05:36:02Z-
dc.date.available2018-03-16T05:36:02Z-
dc.date.issued2014-08-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53(8), 086502en_US
dc.identifier.issn0021-4922-
dc.identifier.issn1347-4065-
dc.identifier.urihttp://iopscience.iop.org/article/10.7567/JJAP.53.086502/meta-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/47898-
dc.description.abstractTransparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visibje region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were-enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of. the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics. (C) 2014 The Japan Society of Applied Physicsen_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467).en_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectROOM-TEMPERATUREen_US
dc.subjectTRANSPARENTen_US
dc.subjectFABRICATIONen_US
dc.subjectDIODEen_US
dc.titleEnhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodesen_US
dc.title.alternativeAgen_US
dc.typeArticleen_US
dc.relation.no8-
dc.relation.volume53-
dc.identifier.doi10.7567/JJAP.53.086502-
dc.relation.page86502-86502-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorOh, Dohyun-
dc.contributor.googleauthorYun, Dong Yeol-
dc.contributor.googleauthorCho, Woon-Jo-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2014032123-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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