Initiation time of near-infrared laser-induced slip on the surface of silicon wafers
- Title
- Initiation time of near-infrared laser-induced slip on the surface of silicon wafers
- Author
- 장경영
- Issue Date
- 2014-06
- Publisher
- AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
- Citation
- APPLIED PHYSICS LETTERS, 권: 104, 호: 25
- Abstract
- We have determined the initiation time of laser-induced slip on a silicon wafer surface subjected to a near-infrared continuous-wave laser by numerical simulations and experiments. First, numerical analysis was performed based on the heat transfer and thermoelasticity model to calculate the resolved shear stress and the temperature-dependent yield stress. Slip initiation time was predicted by finding the time at which the resolved shear stress reached the yield stress. Experimentally, the slip initiation time was measured by using a laser scattering technique that collects scattered light from the silicon wafer surface and detects strong scattering when the surface slip is initiated. The surface morphology of the silicon wafer surface after laser irradiation was also observed using an optical microscope to confirm the occurrence of slip. The measured slip initiation times agreed well with the numerical predictions. (C) 2014 AIP Publishing LLC.
- URI
- http://aip.scitation.org/doi/10.1063/1.4885385http://hdl.handle.net/20.500.11754/47216
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.4885385
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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