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Comprehensive Studies on the Carrier Transporting Property and Photo-Bias Instability of Sputtered Zinc Tin Oxide Thin Film Transistors

Title
Comprehensive Studies on the Carrier Transporting Property and Photo-Bias Instability of Sputtered Zinc Tin Oxide Thin Film Transistors
Author
정재경
Keywords
Bias stress instability; light stress instability; mass density; oxygen vacancy defect; thin-film transistors (TFTs); zinc tin oxide (ZTO)
Issue Date
2014-07
Publisher
IEEE
Citation
IEEE Transactions on Election Device, Sep 2014, 61(9), P.2197-2200
Abstract
This study examined the effects of the chamber pressure, radio frequency power and oxygen flow ratio during channel deposition on the performance and photobias stability of zinc tin oxide (ZTO) thin film transistors (TFTs). The densification of the ZTO thin film allowed the improvement in the field-effect mobility and the suppression in the negative bias illumination stress (NBIS) instability of the resulting TFTs simultaneously, irrespective of the specific process condition. The porosity in the ZTO channel layer was shown to prevent the effective intercalation of the Sn 5s orbital and, thus, deteriorate the field-effect mobility. Furthermore, the increased effective surface area in the porous ZTO film adversely affected the NBIS stability of the resulting TFTs because the porosity-related surface states and oxygen vacancy defects provide the hole trapping centers and the delocalized electron free carrier, respectively. Therefore, the densification of ZTO channel layer is a key factor for the high mobility and good photobias stability of the TFTs. This concept can be applicable for any metal-oxide-TFTs.
URI
https://ieeexplore.ieee.org/document/6862886/
ISSN
0018-9383
DOI
10.1109/TED.2014.2337307
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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