Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-03-15T04:22:49Z | - |
dc.date.available | 2018-03-15T04:22:49Z | - |
dc.date.issued | 2014-08 | - |
dc.identifier.citation | CARBON, 2014, 75, p244-248 | en_US |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0008622314003169?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/47047 | - |
dc.description.abstract | Current-voltage (I-V) curves for Al/CuInS2 (CIS) quantum dots (QDs) embedded in graphene-oxide layer/indium-tin-oxide devices at 300 K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 1 x 10(4), which was 100 times larger than the ON/OFF ratio of the device without CIS QDs. I-V curves and write-read-erase-read voltage cycles demonstrated the rewritable nonvolatile memory properties of the organic bistable devices (OBDs) with ON and OFF current states at the same voltage. The retention time was above 1 x 10(5) s, indicative of the memory stability of the OBDs. I-V curve at lower voltages up to 0.05 V was attributed to the thermionic emission mechanism, and the curve in the applied voltage range from 0.06 to 0.17 V was related to an ohmic mechanism. The I-V characteristics in the applied voltage above 0.18 V dominantly followed the space-charge-limited-current behaviors. (C) 2014 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND | en_US |
dc.subject | NONVOLATILE REWRITABLE-MEMORY | en_US |
dc.subject | CONJUGATED-POLYMER | en_US |
dc.subject | BISTABILITY | en_US |
dc.subject | ELEMENTS | en_US |
dc.subject | SYSTEM | en_US |
dc.subject | FILMS | en_US |
dc.title | Enhancement of memory margins for stable organic bistable devices based on graphene-oxide layers due to embedded CuInS2 quantum dots | en_US |
dc.type | Article | en_US |
dc.relation.volume | 75 | - |
dc.identifier.doi | 10.1016/j.carbon.2014.03.059 | - |
dc.relation.page | 244-248 | - |
dc.relation.journal | CARBON | - |
dc.contributor.googleauthor | Yun, Dong-Yeol | - |
dc.contributor.googleauthor | Park, Hun-Min | - |
dc.contributor.googleauthor | Kim, Sung-Woo | - |
dc.contributor.googleauthor | Kim, Sang-Wook | - |
dc.contributor.googleauthor | Kim, Tae-Whan | - |
dc.relation.code | 2014026858 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
dc.identifier.researcherID | 55880935300 | - |
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