Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-03-13T09:17:09Z | - |
dc.date.available | 2018-03-13T09:17:09Z | - |
dc.date.issued | 2013-11 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, 권: 103, 호; 21 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | http://aip.scitation.org/doi/10.1063/1.4831783 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/46291 | - |
dc.description.abstract | Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiOx). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 degrees C in a vacuum ambient. As the annealing temperature increases from 300 degrees C to 450 degrees C, the mobility increases drastically from 0.07 cm(2)/Vs to 0.61 cm(2)/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta5+ ions that can act as electron donors. (C) 2013 AIP Publishing LLC. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF/MEST, No. 2012011730 and No. 2013-R1A1A2A10005186). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA | en_US |
dc.title | The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties | en_US |
dc.type | Article | en_US |
dc.relation.no | 21 | - |
dc.relation.volume | 103 | - |
dc.identifier.doi | 10.1063/1.4831783 | - |
dc.relation.page | 1-2 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Ok, Kyung-Chul | - |
dc.contributor.googleauthor | Park, Yoseb | - |
dc.contributor.googleauthor | Chung, Kwun-Bum | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2013008977 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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