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dc.contributor.author김태환-
dc.date.accessioned2018-03-13T09:15:23Z-
dc.date.available2018-03-13T09:15:23Z-
dc.date.issued2013-11-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, 권: 52, 호: 11en_US
dc.identifier.issn0021-4922-
dc.identifier.issn1347-4065-
dc.identifier.urihttp://iopscience.iop.org/article/10.7567/JJAP.52.11NK02/meta-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/46289-
dc.description.abstractOrganic bistable devices (OBDs) with CuInS2 (CIS) quantum dots (QDs) embedded in a poly(N-vinylcarbazole) (PVK) layer were fabricated by spin coating. Current-voltage (I-V) curves of Al/colloidal hybrid CIS QD-PVK/indium tin oxide devices at 300 K showed that the current bistability with an ON/OFF ratio of 1 x 10(3) is larger than that of OBDs without CIS QDs. The number of retention cycles of the ON and OFF states for the OBDs was above 1 x 10(5). The carrier transport mechanisms of the OBDs were described on the basis of the I-V results. (C) 2013 The Japan Society of Applied Physicsen_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467).en_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDen_US
dc.titleElectrical Bistability of Organic Bistable Devices Based on Colloidal CuInS2 Quantum Dots Embedded in a Poly(N-vinylcarbazole) Layeren_US
dc.typeArticleen_US
dc.relation.volume52-
dc.identifier.doi10.7567/JJAP.52.11NK02-
dc.relation.page21-24-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorPark, Hun-Min-
dc.contributor.googleauthorYun, Dong-Yeol-
dc.contributor.googleauthorKim, Sang-Wook-
dc.contributor.googleauthorKim, Tae-Whan-
dc.relation.code2013010434-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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