Self-forming barrier characteristics of Cu-V and Cu-Mn films for Cu interconnects
- Title
- Self-forming barrier characteristics of Cu-V and Cu-Mn films for Cu interconnects
- Author
- 박종완
- Keywords
- Cu interconnection; Self-forming barrier; V; Mn
- Issue Date
- 2013-11
- Publisher
- ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
- Citation
- THIN SOLID FILMS, 권: 547, 페이지: 141-145
- Abstract
- We investigated the influence of annealing on the diffusion barrier property in a Mn-based and V-based barrier layer. The samples were annealed at various temperatures for 1 h in vacuum. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for the Cu-Mn and Cu-V alloys. Transmission electron microscopy showed that a 4-7 nm V-based interlayer self-formed and a 2-5 nm Mn-based interlayer self-formed at the interface after annealing. The resistivity of the annealed Cu-V alloy was reduced to 8.1 mu Omega-cm, which is greater than the resistivity of the annealed Cu-Mn alloy. The Mn-based interlayer and V-based interlayer showed excellent thermal stability. The results show that Mn and V based Cu alloys are suitable seed layer materials for Cu interconnects. (C) 2013 Elsevier B. V. All rights reserved.
- URI
- http://kiss.kstudy.com/thesis/thesis-view.asp?key=3388080http://hdl.handle.net/20.500.11754/46173
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2013.04.052
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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