Interband tansition and electronic structures in strained In (x) Ga1-x N/GaN multiple quantum well
- Title
- Interband tansition and electronic structures in strained In (x) Ga1-x N/GaN multiple quantum well
- Other Titles
- GaN multiple quantum well
- Author
- 김태환
- Keywords
- InxGa1-xN/GaN multiple quantum well; Polarization effect; Electronic structure; and Interband transition
- Issue Date
- 2013-06
- Publisher
- KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, JUN 2013, 62(11), p1668-p1671, 4p.
- Abstract
- In (x) Ga1-x N/GaN multiple quantum wells (MQWs), composed of 28- In0.29Ga0.71N wells and 24- In0.23Ga0.77N wells, were grown by using metal-organic chemical vapor deposition. Temperaturedependent photoluminescence (PL) spectra showed that the energies of the two dominant peaks in the In (x) Ga1-x N/GaN MQWs decreased with increasing temperature. The electronic subband energies and the wavefunctions in the In (x) Ga1-x N/GaN MQWs were calculated by solving the Schrodinger equation in the 8-band envelope function approximation. The effects of the spontaneous polarization, strain and piezoelectric polarizations on the electronic structures of the In (x) Ga1-x N/GaN MQWs were examined to explain the PL data. The calculated interband transition energies from the ground electronic subbands to the ground hole subbands in In (x) Ga1-x N/GaN MQWs were in reasonable agreement with those obtained from the PL spectra.
- URI
- https://link.springer.com/article/10.3938/jkps.62.1668http://hdl.handle.net/20.500.11754/45599
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.62.1668
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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