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dc.contributor.author박진섭-
dc.date.accessioned2018-03-12T05:32:07Z-
dc.date.available2018-03-12T05:32:07Z-
dc.date.issued2013-08-
dc.identifier.citationJournal of materials science Materials in electronics, Aug 2013, 24(8), P.2989-2994en_US
dc.identifier.issn0957-4522-
dc.identifier.issn1573-482X-
dc.identifier.urihttps://link.springer.com/article/10.1007%2Fs10854-013-1201-7-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/45376-
dc.description.abstractOne-dimensional Mn doped ZnO nanocrystallites were synthesized through a facile low temperature surfactant free chemical route. The crystallite structure and morphological evolution of the particles were revealed to be of wurtzite phase and rod like structures from the X-ray diffraction and transmission electron microscopic analysis, respectively. Using Raman spectroscopy the role of oxygen related defects and phase purity in the Mn substituted ZnO systems were studied systematically. A significant suppression in the sub-band edge emission was visualized in the room temperature emission spectra of the Mn doped systems. The intensity ratio in between the near-band edge and defect-level emissions was observed to increase, signifying the reduction in oxygen related defects and revealing their influence on the crystallinity on the Mn substituted ZnO species. These variations were correlated with the increasing number of Mn ions in the host lattice, which results with their passivating action on the surface defects.en_US
dc.description.sponsorshipM.K. would like to acknowledge the Chiba Institute of Technology, Japan for the XPS measurements. Dr. N. Sabari Arul is acknowledged for the fruitful discussions.en_US
dc.language.isoenen_US
dc.publisherSpringer Science + Business Mediaen_US
dc.subjectOxygen Related Defecten_US
dc.subjectRoom Temperature Emissionen_US
dc.subjectWurtzite Latticeen_US
dc.subjectRoom Temperature Emission Spectrumen_US
dc.subjectTypical Characteristic Featureen_US
dc.titleSuppression of defect level emissions in low temperature fabricated one-dimensional Mn doped ZnO nanorodsen_US
dc.typeArticleen_US
dc.relation.volume24-
dc.identifier.doi10.1007/s10854-013-1201-7-
dc.relation.page2989-2994-
dc.relation.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS-
dc.contributor.googleauthorMohan Kumar, G.-
dc.contributor.googleauthorIlanchezhiyan, P.-
dc.contributor.googleauthorKawakita, J.-
dc.contributor.googleauthorPark, J.-
dc.contributor.googleauthorJayavel, R.-
dc.relation.code2013010788-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjinsubpark-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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