Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 성명모 | - |
dc.date.accessioned | 2018-03-12T05:17:26Z | - |
dc.date.available | 2018-03-12T05:17:26Z | - |
dc.date.issued | 2013-06 | - |
dc.identifier.citation | Advanced Materials, 2013, 25(24), p3351-3356 | en_US |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://onlinelibrary.wiley.com/doi/10.1002/adma.201300740/abstract;jsessionid=C4B0AFF055BC6304FE799878BCE7BFF3.f01t02 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/45361 | - |
dc.description.abstract | A new indolocabazole derivative possessing an extended aromatic core and solubilizing long aliphatic chains effectively self-assembles and crystallizes within the nanoscale channels to form single-crystal nanowires via a direct printing method from an ink solution. Single-crystal organic nanowire transistor arrays based on the π-extended indolocarbazole derivative exhibit an excellent hole mobility of 1.5 cm2 V-1 s-1 and outstanding environmental stability. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation (NRF) grant funded by the Korea government (MEST) (No. 2012-0008678), and the Global Frontier R&D Program on the Center for Multiscale Energy System (No. 2011-0031562), Nano. Material Technology Development Program (2012M3A7B4034985), and a Global Ph.D. Fellowship Program (No. 2011-0007507) funded by the National Research Foundation under the Ministry of Science, ICT & Future, Korea. We thank the Korea Basic Science Institute (KBSI) for allowing us to use their EF-TEM. | en_US |
dc.language.iso | en | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.subject | indolocarbazole | en_US |
dc.subject | organic semiconductors | en_US |
dc.subject | single-crystal organic nanowires | en_US |
dc.subject | field-effect transistors | en_US |
dc.subject | flexible electronics | en_US |
dc.title | High-Performance Air-Stable Single-Crystal Organic Nanowires Based on a New Indolocarbazole Derivative for Field-Effect Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 24 | - |
dc.relation.volume | 25 | - |
dc.identifier.doi | 10.1002/adma.201300740 | - |
dc.relation.page | 3351-3356 | - |
dc.relation.journal | ADVANCED MATERIALS | - |
dc.contributor.googleauthor | Park, K. S. | - |
dc.contributor.googleauthor | Salunkhe, S. M. | - |
dc.contributor.googleauthor | Lim, I. | - |
dc.contributor.googleauthor | Cho, C. G. | - |
dc.contributor.googleauthor | Han, S. H. | - |
dc.contributor.googleauthor | Sung, M. M. | - |
dc.relation.code | 2013008681 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF CHEMISTRY | - |
dc.identifier.pid | smm | - |
dc.identifier.researcherID | 7202291240 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.