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dc.contributor.author이휘건-
dc.date.accessioned2018-03-10T04:31:34Z-
dc.date.available2018-03-10T04:31:34Z-
dc.date.issued2013-10-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13(9), P.6264-6268en_US
dc.identifier.issn1533-4880-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2013/00000013/00000009/art00061-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/44665-
dc.description.abstractZnO nanorods are grown on Si-based substrate by chemical bath deposition method in aqueous solution using zinc nitrate hexahydrate. Various substrates having different surface morphology are used to evaluate their effect on growing ZnO nanorods, such as flat Si(100) wafer, small and large textured-Si wafer, porous silicon, flat SiO2 wafer, small and large textured-SiO2 wafer. The length, diameter, geometry, and coverage density of ZnO nanorods are investigated by field-emission scanning electron microscopy and summarized. SiO2 is a preferred substrate for the growth of ZnO nanorods to Si if the surface morphology of substrate is same, and the textured surface has much higher coverage density (>95%) than the flat surface. Each nanorod is vertically grown along the c-axis on the top of each pyramid face for textured substrate, and forms the 3D sea sponge-like ZnO structure. The characteristics of ZnO nanorods grown on various substrates are analyzed by grazing-angle X-ray diffraction (XRD) and photoluminescence (PL) measurements.en_US
dc.description.sponsorshipThis study was supported by the Korean Science and Engineering Foundation (KRF-2011-002-8850 and KRF-2011-002-7329).en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USAen_US
dc.subjectZnO Nanoroden_US
dc.subjectCoverage Densityen_US
dc.subjectChemical Bath Depositionen_US
dc.subjectTextured Surfaceen_US
dc.subjectSurface Morphologyen_US
dc.subjectNANORODSen_US
dc.subjectFILMSen_US
dc.subjectDEVICESen_US
dc.titleFormation of ZnO Nanostructures Grown on Si and SiO2 Substratesen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume13-
dc.identifier.doi10.1166/jnn.2013.7687-
dc.relation.page6264-6268-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorLee, Seungjin-
dc.contributor.googleauthorPark, Eunkyung-
dc.contributor.googleauthorLee, Jongtack-
dc.contributor.googleauthorPark, Taehee-
dc.contributor.googleauthorLee, Sang-hwa-
dc.contributor.googleauthorKim, Jae-yong-
dc.contributor.googleauthorYi, Whikun-
dc.relation.code2013010833-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF CHEMISTRY-
dc.identifier.pidwkyi-
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COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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