Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-03-10T01:51:36Z | - |
dc.date.available | 2018-03-10T01:51:36Z | - |
dc.date.issued | 2013-05 | - |
dc.identifier.citation | Applied Physics Letters, 2013, 102(21), 212409 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://aip.scitation.org/doi/pdf/10.1063/1.4808084 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/44561 | - |
dc.description.abstract | We investigated how the Pt capping layer affected perpendicular magnet anisotropy in magnetic-tunnel-junctions fabricated with a Ta electrode, a lower CoFeB layer, an MgO barrier, an upper CoFeB layer, and a Pt capping electrode, which was estimated by using an anisotropy constant multiplied by the upper CoFeB layer thickness (K-u*t). The maximum K-u*t was found at an annealing temperature of 300 degrees C for an magnetic tunnel junction with an upper CoFeB layer thickness of 0.9 nm, indicating a highly textured MgO (100) barrier of 1.0 nm with none of the remaining Pt inter-diffused in the upper CoFeB layer. (C) 2013 AIP Publishing LLC. | en_US |
dc.description.sponsorship | This work was financially supported by the IT R&D program of the Ministry of Trade, Industry&Energy/Korean Evaluation Institute of Industrial Technology [10043398, Fundamental technology development of materials of magnet resistance change (MR ratio >120%) and tunneling barrier for advanced low power memory device], Republic of Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Amer INST Physics | en_US |
dc.subject | Annealing | en_US |
dc.subject | Electrodes | en_US |
dc.subject | Tantalum | en_US |
dc.subject | Anisotropy | en_US |
dc.subject | Magnetic tunnel junctions | en_US |
dc.title | Effects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions | en_US |
dc.title.alternative | CoFeB | en_US |
dc.type | Article | en_US |
dc.relation.no | 21 | - |
dc.relation.volume | 102 | - |
dc.identifier.doi | 10.1063/1.4808084 | - |
dc.relation.page | 1-4 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Lee, Du-Yeong | - |
dc.contributor.googleauthor | Shim, Tae-Hun | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2013008977 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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