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dc.contributor.author박재근-
dc.date.accessioned2018-03-10T01:51:36Z-
dc.date.available2018-03-10T01:51:36Z-
dc.date.issued2013-05-
dc.identifier.citationApplied Physics Letters, 2013, 102(21), 212409en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://aip.scitation.org/doi/pdf/10.1063/1.4808084-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/44561-
dc.description.abstractWe investigated how the Pt capping layer affected perpendicular magnet anisotropy in magnetic-tunnel-junctions fabricated with a Ta electrode, a lower CoFeB layer, an MgO barrier, an upper CoFeB layer, and a Pt capping electrode, which was estimated by using an anisotropy constant multiplied by the upper CoFeB layer thickness (K-u*t). The maximum K-u*t was found at an annealing temperature of 300 degrees C for an magnetic tunnel junction with an upper CoFeB layer thickness of 0.9 nm, indicating a highly textured MgO (100) barrier of 1.0 nm with none of the remaining Pt inter-diffused in the upper CoFeB layer. (C) 2013 AIP Publishing LLC.en_US
dc.description.sponsorshipThis work was financially supported by the IT R&D program of the Ministry of Trade, Industry&Energy/Korean Evaluation Institute of Industrial Technology [10043398, Fundamental technology development of materials of magnet resistance change (MR ratio >120%) and tunneling barrier for advanced low power memory device], Republic of Korea.en_US
dc.language.isoenen_US
dc.publisherAmer INST Physicsen_US
dc.subjectAnnealingen_US
dc.subjectElectrodesen_US
dc.subjectTantalumen_US
dc.subjectAnisotropyen_US
dc.subjectMagnetic tunnel junctionsen_US
dc.titleEffects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctionsen_US
dc.title.alternativeCoFeBen_US
dc.typeArticleen_US
dc.relation.no21-
dc.relation.volume102-
dc.identifier.doi10.1063/1.4808084-
dc.relation.page1-4-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorLee, Du-Yeong-
dc.contributor.googleauthorShim, Tae-Hun-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2013008977-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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