Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2018-03-09T06:06:29Z | - |
dc.date.available | 2018-03-09T06:06:29Z | - |
dc.date.issued | 2013-07 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS 권: 52 호: 7 부: 1 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.52.071801 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/44241 | - |
dc.description.abstract | We proposed a novel bidirectional two-terminal selective device for realizing a 4F(2) cell size for spin-transfer-torque magnetoresistance random access memory (STT-MRAM). The proposed switching device is composed of a Schottky-barrier contact and a PN junction with a metal-semiconductor-semiconductor (M/S/S) structure. The proposed M/S/S switching device provides a current density of over 10(6) A/cm(2), which is sufficient to write the magnetic tunnel junction (MTJ), and a bilateral current flow using a punch through with an extended depletion region at a junction. Furthermore, we investigated its switching characteristics by comparing parameters such as doping profile and junction length. From this work, it is expected that an M/S/S structure will be a promising switching device for STT MRAM. (C) 2013 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | Ministry of Knowledge Economy (MKE), Korea, under the Information Technology Research Center (ITRC) support program | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND | en_US |
dc.subject | MAGNETIC TUNNEL-JUNCTIONS | en_US |
dc.subject | TRANSISTORS | en_US |
dc.subject | CHANNEL | en_US |
dc.subject | ARRAY | en_US |
dc.title | Bidirectional Two-Terminal Switching Device with Metal-Semiconductor-Semiconductor Structures for 4F(2) Spin-Transfer-Torque Magnetoresistance Random Access Memory Cell | en_US |
dc.type | Article | en_US |
dc.relation.no | 071801 | - |
dc.relation.volume | 52 | - |
dc.identifier.doi | 10.7567/JJAP.52.071801 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Kil, Gyu-Hyun | - |
dc.contributor.googleauthor | Song, Yun-Heub | - |
dc.relation.code | 2013010434 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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