Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation
- Title
- Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation
- Author
- 박진성
- Keywords
- Ion irradiation; TiO2-x; Hydrogen ion
- Issue Date
- 2013-03
- Publisher
- KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 권: 62 호: 5, 페이지: 781-786
- Abstract
- The effects of different irradiation doses of hydrogen ions on TiO2-x semiconductor films were investigated. The total doses were controlled between similar to 10(14) and similar to 10(15) atom/cm(2) at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.
- URI
- https://link.springer.com/article/10.3938%2Fjkps.62.781http://hdl.handle.net/20.500.11754/44187
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.62.781
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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