LOW VOLTAGE-LOW POWER FULL-BAND UWB RECEIVER FRONT-END
- Title
- LOW VOLTAGE-LOW POWER FULL-BAND UWB RECEIVER FRONT-END
- Author
- 윤태열
- Keywords
- bulk injection; current reuse; front-end; switched biasing; ultra-wideband
- Issue Date
- 2013-02
- Publisher
- John Wiley & Sons, Ltd
- Citation
- Microwave and Optical Technology Letters, Feb 2013, 55(2), P.278-281
- Abstract
- This article proposes a low-voltage, low-power, low-noise, wideband receiver front-end consisting of a low-noise amplifier (LNA) and a mixer. The LNA stage uses a current-reuse technique for low-power consumption and high gain. A switched biasing technique is then used to reduce the flicker noise of the mixer. A bulk injection structure is adopted for low-voltage operation of the mixer. The proposed receiver front-end achieves input impedance matching of less than -10 dB from 3.1 to 10.6 GHz, a minimum noise figure of 4.9 dB, and a maximum power gain of 17.7 dB while consuming 8.25 mW from 6.87 mA and 1.2 V. This receiver front-end is fabricated using a 0.18-mu m CMOS process. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:278-281, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27299
- URI
- http://onlinelibrary.wiley.com/doi/10.1002/mop.27299/abstracthttp://hdl.handle.net/20.500.11754/44062
- ISSN
- 0895-2477
- DOI
- 10.1002/mop.27299
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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