Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2018-03-09T02:33:58Z | - |
dc.date.available | 2018-03-09T02:33:58Z | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | Microelectronic Engineering, Volume 109, September 2013, Pages 160-162 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.issn | 1873-5568 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0167931713002736 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/43992 | - |
dc.description.abstract | We investigated the effects of gas flow rates during sputtering and thickness of TiN metal gate on the equivalent oxide thickness (EOT) and flat band voltage (VFB) in the gate-first (GF) processed metal oxide semiconductor (MOS) devices with HfO2 and HfSiON-based gate dielectrics. For both HfO2 and HfiSON devices, more metallic TiN causes thinner EOT with lower VFB while higher VFB is observed along with thicker EOT for nitrogen-rich TiN case. Also, thicker TiN induces more positive VFB shift. However, for HfSiON, amount of VFB shift and EOT reduction is smaller than those of HfO2-based device, resulting from stronger immunity of Hf-Si bonding against oxygen vacancy generation during thermal process. | en_US |
dc.description.sponsorship | High-k gate dielectricMetal gateFlat-band voltageCMOS integration | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier B.V. | en_US |
dc.subject | High-k gate dielectric | en_US |
dc.subject | Metal gate | en_US |
dc.subject | Flat-band voltage | en_US |
dc.subject | CMOS integration | en_US |
dc.title | Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices | en_US |
dc.type | Article | en_US |
dc.relation.volume | 109 | - |
dc.identifier.doi | 10.1016/j.mee.2013.03.056 | - |
dc.relation.page | 160-162 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Lee, Seok-Hee | - |
dc.contributor.googleauthor | Choi, Rino | - |
dc.contributor.googleauthor | Choi, Changhwa | - |
dc.relation.code | 2013011299 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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