Effects of ion beam-irradiated Si on atomic force microscope local oxidation
- Title
- Effects of ion beam-irradiated Si on atomic force microscope local oxidation
- Author
- 이해원
- Keywords
- HYDROGEN-PASSIVATED SILICON; SCANNED PROBE OXIDATION; FIELD-INDUCED OXIDATION; BOMBARDED SILICON; POROUS SILICON; KINETICS; NANOLITHOGRAPHY; MECHANISM; VOLTAGE; SI(100)-(2X1)
- Issue Date
- 2013-03
- Publisher
- ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
- Citation
- Chemical physics letters, Vol.566 , p.44-49
- Abstract
- Atomic force microscope oxidation lithography was used to study the effects of low-energy ion beams on a silicon substrate. The oxygen containing layer formed by H+ ion beam irradiation was characterized by Kelvin probe force microscopy. Giant oxide features with heights over 100 nm were fabricated by cathodic oxidation. The growth rate of the oxide features increased on the H+ ion-irradiated substrate and the etching selectivity was observed for individual oxide features. The density and oxygen concentration of the oxide features were affected by the chemical etching process. The mechanism of cathodic oxidation by Ohmic current was proposed. (c) 2013 Elsevier B.V. All rights reserved.
- Description
- International Research & Development Program
- URI
- https://www.sciencedirect.com/science/article/abs/pii/S0009261413002637http://hdl.handle.net/20.500.11754/43967
- ISSN
- 0009-2614
- DOI
- 10.1016/j.cplett.2013.02.054
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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