Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박종완 | - |
dc.date.accessioned | 2018-02-28T07:42:59Z | - |
dc.date.available | 2018-02-28T07:42:59Z | - |
dc.date.issued | 2012-09 | - |
dc.identifier.citation | Journal of Electronic Materials, Sep 2012, 41(9), P.2380-2386 | en_US |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://link.springer.com/article/10.1007%2Fs11664-012-2166-7 | - |
dc.description.abstract | In this study, we fabricated phosphorus-doped zinc oxide-based thin-film transistors (TFTs) using direct current (DC) magnetron sputtering at a relatively low temperature of 100A degrees C. To improve the TFT device performance, including field-effect mobility and bias stress stability, phosphorus dopants were employed to suppress the generation of intrinsic defects in the ZnO-based semiconductor. The positive and negative bias stress stabilities were dramatically improved by introducing the phosphorus dopants, which could prevent turn-on voltage (V (ON)) shift in the TFTs caused by charge trapping within the active channel layer. The study showed that phosphorus doping in ZnO was an effective method to control the electrical properties of the active channel layers and improve the bias stress stability of oxide-based TFTs. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0018593). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer | en_US |
dc.subject | Phosphorus doping | en_US |
dc.subject | oxide thin-film transistors | en_US |
dc.subject | zinc oxide | en_US |
dc.subject | oxide semiconductor | en_US |
dc.subject | bias stress stability | en_US |
dc.title | Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 41 | - |
dc.identifier.doi | 10.1007/s11664-012-2166-7 | - |
dc.relation.page | 2380-2386 | - |
dc.relation.journal | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.contributor.googleauthor | Han, Dong-Suk | - |
dc.contributor.googleauthor | Moon, Dae-Yong | - |
dc.contributor.googleauthor | Moon, Yeon-Keon | - |
dc.contributor.googleauthor | Lee, Sih | - |
dc.contributor.googleauthor | Kim, Kyung-Taek | - |
dc.contributor.googleauthor | Lee, Sang-Ho | - |
dc.contributor.googleauthor | Kim, Woong-Sun | - |
dc.contributor.googleauthor | Park, Jong-Wan | - |
dc.contributor.googleauthor | 한동석 | - |
dc.contributor.googleauthor | 문대영 | - |
dc.contributor.googleauthor | 문연근 | - |
dc.contributor.googleauthor | 이시 | - |
dc.contributor.googleauthor | 김경택 | - |
dc.contributor.googleauthor | 이상호 | - |
dc.contributor.googleauthor | 김웅선 | - |
dc.contributor.googleauthor | 박종완 | - |
dc.relation.code | 2012205022 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jwpark | - |
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