Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이승백 | - |
dc.date.accessioned | 2018-02-28T04:40:04Z | - |
dc.date.available | 2018-02-28T04:40:04Z | - |
dc.date.issued | 2011-05 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY; MAY 2011, 58 5,1522-1526 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001552646 | - |
dc.description.abstract | We report on the dependence of the reduced metallic percolation paths of single-wall carbon-nanotube-network thin-films (SCNTFs) on the channel aspect ratio and the number of strips (N(strip)). A longer channel length (L(C)) and the existence of strips in the channel region limit the number of metallic percolation conducting paths existing between the source and the drain in SCNTF transistors. Increasing the channel aspect ratio threefold resulted in an increase in the on/off current ratio (I(on)/I(off)) by 246%. We also observed that introducing 15 strips into the channel increased I(on)/I(off) by 859%, which was attributed to a reduction in the number of metallic percolation paths formed between the source and the drain. The results show that with a higher aspect ratio and with strips introduced into the channels, the semiconducting behavior of solution-processed SCNTF transistors can be enhanced. | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0024875) and partly by the Global Partnership Program for International Cooperative Research, the International Research and Development Program of the National Research Foundationof Korea (NRF) funded by the Ministry of Education, Science and Technology of Korea (Grant No. K20901000006-09E0100-00610), the Seoul R&BD Program (ST090864), and HY-SDR Research Center at Hanyang University, Seoul, Korea, under the Information Technology Research Center (ITRC) program of the Ministry of Knowledge Economy, Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA | en_US |
dc.subject | Carbon nanotube | en_US |
dc.subject | Thin-film transistor | en_US |
dc.subject | Metallic percolation | en_US |
dc.subject | Solution process | en_US |
dc.title | Effective Reduction of Leakage Currents in Single-walled Carbon-nanotube-network Thin-film Transistors | en_US |
dc.type | Article | en_US |
dc.relation.volume | 58 | - |
dc.identifier.doi | 10.3938/jkps.58.1522 | - |
dc.relation.page | 1522-1526 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Jeong, Minho | - |
dc.contributor.googleauthor | Choi, Eunsuk | - |
dc.contributor.googleauthor | Lee, Kunhak | - |
dc.contributor.googleauthor | Kim, Jinoh | - |
dc.contributor.googleauthor | Kim, Ahsung | - |
dc.contributor.googleauthor | Chun, Sungwoo | - |
dc.contributor.googleauthor | Lim, Chaehyun | - |
dc.contributor.googleauthor | Lee, Seung-Beck | - |
dc.relation.code | 2011205987 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | sbl22 | - |
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