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dc.contributor.author박재근-
dc.date.accessioned2018-02-28T04:06:20Z-
dc.date.available2018-02-28T04:06:20Z-
dc.date.issued2011-05-
dc.identifier.citationIEICE TRANSACTIONS ON ELECTRONICS, E94C(5),850-853en_US
dc.identifier.issn0916-8524-
dc.identifier.urihttp://www.jstage.jst.go.jp/article/transele/E94.C/5/E94.C_5_850/_article-
dc.description.abstractIn summary, we successfully developed the polymer nonvolatile 4F(2) memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.en_US
dc.description.sponsorshipThis research was supported by "The National Research Program for Terabit Nonvolatile Memory Development," sponsored by the Korean Ministry of Knowledge Economy.en_US
dc.language.isoenen_US
dc.publisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, KIKAI-SHINKO-KAIKAN BLDG, 3-5-8, SHIBA-KOEN, MINATO-KU, TOKYO, 105-0011, JAPANen_US
dc.subjectMemoryen_US
dc.subjectNanocrystalen_US
dc.subjectNonvolatileen_US
dc.subjectPolymeren_US
dc.titleDependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memoryen_US
dc.typeArticleen_US
dc.relation.no5-
dc.relation.volumeE94C-
dc.identifier.doi10.1587/transele.E94.C.850-
dc.relation.page850-853-
dc.relation.journalIEICE TRANSACTIONS ON COMMUNICATIONS-
dc.contributor.googleauthorLee, Jong-Dae-
dc.contributor.googleauthorSeung, Hyun-Min-
dc.contributor.googleauthorKwon, Kyoung-Cheol-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2011203907-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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