Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-02-28T04:06:20Z | - |
dc.date.available | 2018-02-28T04:06:20Z | - |
dc.date.issued | 2011-05 | - |
dc.identifier.citation | IEICE TRANSACTIONS ON ELECTRONICS, E94C(5),850-853 | en_US |
dc.identifier.issn | 0916-8524 | - |
dc.identifier.uri | http://www.jstage.jst.go.jp/article/transele/E94.C/5/E94.C_5_850/_article | - |
dc.description.abstract | In summary, we successfully developed the polymer nonvolatile 4F(2) memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics. | en_US |
dc.description.sponsorship | This research was supported by "The National Research Program for Terabit Nonvolatile Memory Development," sponsored by the Korean Ministry of Knowledge Economy. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, KIKAI-SHINKO-KAIKAN BLDG, 3-5-8, SHIBA-KOEN, MINATO-KU, TOKYO, 105-0011, JAPAN | en_US |
dc.subject | Memory | en_US |
dc.subject | Nanocrystal | en_US |
dc.subject | Nonvolatile | en_US |
dc.subject | Polymer | en_US |
dc.title | Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | E94C | - |
dc.identifier.doi | 10.1587/transele.E94.C.850 | - |
dc.relation.page | 850-853 | - |
dc.relation.journal | IEICE TRANSACTIONS ON COMMUNICATIONS | - |
dc.contributor.googleauthor | Lee, Jong-Dae | - |
dc.contributor.googleauthor | Seung, Hyun-Min | - |
dc.contributor.googleauthor | Kwon, Kyoung-Cheol | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2011203907 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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