Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs(0.32)Sb(0.68) Buffer Layer
- Title
- Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs(0.32)Sb(0.68) Buffer Layer
- Author
- 김태환
- Keywords
- InAs; AlAsSb; MBE; Structural property; Electrical property; MOLECULAR-BEAM EPITAXY
- Issue Date
- 2011-05
- Publisher
- 한국물리학회
- Citation
- THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol.58 No.51 [2011], 1347-1350(4쪽)
- Abstract
- InAs layers on GaAs substrates with AlAs0.32Sb0.68 buffer layers were grown by using molecular beam epitaxy. X-ray diffraction patterns showed that the dominant peaks corresponding to the GaAs, InAs, and AlAs0.32Sb0.68 layers appeared. Atomic force microscopy images showed that the root-mean-square surface roughness of the InAs surface increased with increasing thickness of the InAs layer due to the lattice-constant difference between the InAs and the AlAs0.32Sb0.68 layers, resulting in relaxation of the strain in the InAs layer. Hall effect measurements at 300 K showed that the electron mobility increased with increasing InAs film thickness.
- URI
- https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001552596http://hdl.handle.net/20.500.11754/41019
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.58.1347
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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