Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정재경 | - |
| dc.date.accessioned | 2018-02-27T05:46:36Z | - |
| dc.date.available | 2018-02-27T05:46:36Z | - |
| dc.date.issued | 2016-03 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 63, NO 3, Page. 1054-1058 | en_US |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.issn | 1557-9646 | - |
| dc.identifier.uri | http://ieeexplore.ieee.org/document/7399747/ | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11754/40826 | - |
| dc.description.abstract | The effect of oxygen high pressurized treatment (OHPT) on the gate-bias thermal stress (BTS) instability of amorphous indium-gallium-zinc-oxide (IGZO) TFTs was investigated. OHPT at 10 atm and 300 degrees C produces TFTs with better reliability under the positive/negative BTS conditions, which can be attributed to the reduction in the oxygen vacancy defect. However, OHPT at a higher pressure (15 atm) deteriorated the BTS-induced stability of the IGZO TFTs. The rationale for this strong OHPT dependence on the BTS instability of IGZO TFTs was discussed based on the single-frame oxygen-related defect model. | en_US |
| dc.description.sponsorship | This work was supported in part by the Research Grant from Samsung Display and in part by the Research Fund through Hanyang University under Grant HY-2015. The review of this paper was arranged by Editor JianJang Huang. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
| dc.subject | Amorphous indium-gallium-zinc-oxide (a-IGZO) | en_US |
| dc.subject | instability | en_US |
| dc.subject | interstitial oxygen | en_US |
| dc.subject | oxygen vacancy | en_US |
| dc.subject | TFT | en_US |
| dc.title | Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy Barrier | en_US |
| dc.type | Article | en_US |
| dc.relation.no | 3 | - |
| dc.relation.volume | 63 | - |
| dc.identifier.doi | 10.1109/TED.2015.2511883 | - |
| dc.relation.page | 1054-1058 | - |
| dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.contributor.googleauthor | Song, Ji Hun | - |
| dc.contributor.googleauthor | Oh, Nuri | - |
| dc.contributor.googleauthor | Anh, Byung Du | - |
| dc.contributor.googleauthor | Kim, Hye Dong | - |
| dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
| dc.relation.code | 2016003031 | - |
| dc.sector.campus | S | - |
| dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
| dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
| dc.identifier.pid | jkjeong1 | - |
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