Repository at Hanyang UniversityCOLLEGE OF NATURAL SCIENCES[S](자연과학대학)CHEMISTRY(화학과)Articles
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dc.contributor.author성명모-
dc.date.accessioned2018-02-23T05:06:34Z-
dc.date.available2018-02-23T05:06:34Z-
dc.date.issued2012-07-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 권: 101, 호: 4, 4p.en_US
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttp://aip.scitation.org/doi/pdf/10.1063/1.4739520-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/40404-
dc.description.abstractWe report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 degrees C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of similar to 10(6), while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of similar to 1.51 along with an on/off ratio of similar to 10(3). (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.4739520]en_US
dc.description.sponsorshipThe authors acknowledge the financial support from NRF (NRL program: Grant No. 2012-0000126), Brain Korea 21 Program. Pyo Jin Jeon would like to thank the LOTTE scholarship.en_US
dc.language.isoenen_US
dc.publisherAMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAen_US
dc.subjectOPTICAL-PROPERTIESen_US
dc.subjectEFFECT TRANSISTORSen_US
dc.subjectCONTROLLED GROWTHen_US
dc.subjectPLASMA TREATMENTen_US
dc.subjectSCHOTTKY DIODESen_US
dc.subjectEMISSIONen_US
dc.subjectFABRICATIONen_US
dc.subjectIMPROVEMENTen_US
dc.subjectNANORODSen_US
dc.subjectCIRCUITSen_US
dc.titleAnnealing-induced conductivity transition in ZnO nanowires for field-effect devicesen_US
dc.typeArticleen_US
dc.relation.no4-
dc.relation.volume101-
dc.identifier.doi10.1063/1.4739520-
dc.relation.page--
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorChoi, Heon-Jin-
dc.contributor.googleauthorJeon, Pyo Jin-
dc.contributor.googleauthorLee, Young Tack-
dc.contributor.googleauthorIm, Seongil-
dc.contributor.googleauthorHa, Ryong-
dc.contributor.googleauthorChoi, Heon-Jin-
dc.contributor.googleauthorYoon, Kwan Hyuck-
dc.contributor.googleauthorSung, Myung M.-
dc.relation.code2012200866-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF CHEMISTRY-
dc.identifier.pidsmm-
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