A NEW DIFFERENTIAL STACKED SPIRAL INDUCTOR WITH IMPROVED SELF-RESONANCE FREQUENCY

Abstract

Abstract A new silicon?based differential stacked spiral inductor (DSSI) was implemented using a standard 0.18?μm complimentary metal?oxide semiconductor technology. Based on the measured two?port S?parameter using a standard de?embedding procedure, the self?resonance frequency, fsr, and quality factor, Q, of the new DSSI were compared with a conventional DSSI. The fsr of the new DSSI was nearly twice as high as that of the conventional DSSI, and the Q value of the new DSSI was also enhanced. ⓒ 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1024?1026, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25900