Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김종만 | - |
dc.date.accessioned | 2018-02-23T03:05:14Z | - |
dc.date.available | 2018-02-23T03:05:14Z | - |
dc.date.issued | 2011-05 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES,58(5),1570-1574 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/document/5727939/ | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/40320 | - |
dc.description.abstract | The thermal distribution of polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with sizes close to the nanoregime is analyzed by means of a fluorescent nanothermographic imaging technique based on the heat-induced fluorescence feature of polydiacetylene (PDA) supramolecules. The direct detection of nanoscale hot spots generated by hot carriers in poly-Si TFTs is demonstrated with sufficient spatial resolution. The thermal information of poly-Si TFTs under operation is recorded in a PDA-embedded polyvinyl alcohol film in the fluorescence state. The proposed thermal analysis method for poly-Si TFTs overcomes the fundamental spatial resolution limitation of conventional infrared detection systems and guarantees nanoscale spatial resolution. This approach, which offers cost effectiveness, nontoxicity, and simplicity of calibration steps, can be useful for further analysis of the degradation mechanism and reliability issues of submicrometer poly-Si TFTs. | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology under Grant 20100009903 and Grant 20100018438. The review of this brief was arranged by Editor H.-S. Tae. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Fluorescent imaging | en_US |
dc.subject | hot carrier | en_US |
dc.subject | hot spot | en_US |
dc.subject | polycrystalline silicon (poly-Si) | en_US |
dc.subject | polydiacetylene (PDA) | en_US |
dc.subject | reliability | en_US |
dc.subject | thermal imaging | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.title | Detection of a Nanoscale Hot Spot by Hot Carriers in a Poly-Si TFT Using Polydiacetylene-Based Thermoresponsive Fluorometry | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 58 | - |
dc.identifier.doi | 10.1109/TED.2011.2116025 | - |
dc.relation.page | 1570-1574 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | Choi, Ji-Min | - |
dc.contributor.googleauthor | Choi, Sung-Jin | - |
dc.contributor.googleauthor | Yarimaga, Oktay | - |
dc.contributor.googleauthor | Yoon, Bora | - |
dc.contributor.googleauthor | Kim, Jong-Man | - |
dc.contributor.googleauthor | Choi, Yang-Kyu | - |
dc.relation.code | 2011203864 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF CHEMICAL ENGINEERING | - |
dc.identifier.pid | jmk | - |
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