Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 성명모 | - |
dc.date.accessioned | 2018-02-22T08:48:49Z | - |
dc.date.available | 2018-02-22T08:48:49Z | - |
dc.date.issued | 2012-09 | - |
dc.identifier.citation | Journal of Materials Chemistry, 2012, 22(36), P.19007-p19013, 7p | en_US |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2012/JM/c2jm32767h#!divAbstract | - |
dc.description.abstract | We report on a low-temperature fabrication of organic-inorganic nanohybrid nonvolatile memory transistors using molecular layer deposition combined with atomic layer deposition. A 3 nm ZnO:Cu charge trap layer is sandwiched between 6 nm tunneling and 20 nm blocking self-assembled organic layers. First, we identify a large memory window of 14.1 V operated at +/- 15 V using metal-oxide-semiconductor capacitors. Second, we apply the capacitor structure to the nonvolatile memory transistors which operate in the low voltage range of -1 to 3 V. The writing/erasing (+8 V/-12 V) current ratio of similar to 10(3) of the memory transistors is maintained during the static and dynamic retention measurements. The reported organic-inorganic devices offer new opportunities to develop low-voltage-driven flexible memory electronics fabricated at low temperatures. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (no. 2011-0029811) and by the Global Frintier R&D Program on Center for Multiscale Energy System funded by the National Research Foundation (no. 2011-0031562). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Royal SOC Cemistry | en_US |
dc.subject | FIELD-EFFECT TRANSISTORS | en_US |
dc.subject | MONOLAYER-PRECISION | en_US |
dc.subject | DEVICES | en_US |
dc.subject | SEMICONDUCTORS | en_US |
dc.subject | SUPERLATTICES | en_US |
dc.subject | FABRICATION | en_US |
dc.subject | VOLTAGE | en_US |
dc.subject | SENSORS | en_US |
dc.subject | FILM | en_US |
dc.title | Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics | en_US |
dc.type | Article | en_US |
dc.relation.no | 36 | - |
dc.relation.volume | 22 | - |
dc.identifier.doi | 10.1039/c2jm32767h | - |
dc.relation.page | 19007-19013 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.contributor.googleauthor | Han, Kyu Seok | - |
dc.contributor.googleauthor | Han, Gibok | - |
dc.contributor.googleauthor | Lee, Byoung Hoon | - |
dc.contributor.googleauthor | Sung, Myung Mo | - |
dc.contributor.googleauthor | Lee, Kwang Hyun | - |
dc.contributor.googleauthor | Im, Seongil | - |
dc.contributor.googleauthor | Park, Yerok | - |
dc.contributor.googleauthor | Son, Dong Hee | - |
dc.contributor.googleauthor | 한규석 | - |
dc.contributor.googleauthor | 한기복 | - |
dc.contributor.googleauthor | 이병훈 | - |
dc.contributor.googleauthor | 성명모 | - |
dc.contributor.googleauthor | 이광현 | - |
dc.contributor.googleauthor | 임성길 | - |
dc.contributor.googleauthor | 박예록 | - |
dc.contributor.googleauthor | 손동희 | - |
dc.relation.code | 2012205376 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF CHEMISTRY | - |
dc.identifier.pid | smm | - |
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