Organic light-emitting devices with an n-type bis(ethylenedithio)-tetrathiafulvalene-doped 4,7-diphenyl-1,10-phenanthroline electron transport layer operating at low voltage
- Title
- Organic light-emitting devices with an n-type bis(ethylenedithio)-tetrathiafulvalene-doped 4,7-diphenyl-1,10-phenanthroline electron transport layer operating at low voltage
- Author
- 김태환
- Keywords
- OLED; BEDT-TTF doped BPhen ETL; Enhancement mechanism; BEDT-TTF; DIODES; EMISSION
- Issue Date
- 2012-10
- Publisher
- ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
- Citation
- THIN SOLID FILMS, Vol.521, No.- [2012], p193-196
- Abstract
- The electrical and optical properties of organic light-emitting devices (OLEDs) with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) electron transport layers (ETLs) were investigated. The current density-voltage characteristics of the OLEDs with BEDT-TTF-doped BPhen ETLs and electron only devices with BEDT-TTF-doped BPhen layers showed that the electrons injected from the cathode were increased by inserting a BEDT-TTF-doped BPhen layer. OLEDs containing BEDT-TTF-doped BPhen layers at a doping concentration of 1 wt.% demonstrated the highest current density and luminance values. Enhancements of the electron injection and luminance as well as a decrease in the operating voltage of the OLEDs were achieved by inserting a BEDT-TTF-doped BPhen layer. (C) 2011 Elsevier B. V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0040609011021134?via%3Dihub
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2011.12.011
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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