A novel sensing algorithm for Spin-Transfer-Torque magnetic RAM (STT-MRAM) by utilizing dynamic reference
- Title
- A novel sensing algorithm for Spin-Transfer-Torque magnetic RAM (STT-MRAM) by utilizing dynamic reference
- Author
- 송윤흡
- Keywords
- Spin-Transfer-Torque magneto resistive RAM (STT-MRAM); sense amplifier; dynamic reference; read margin
- Issue Date
- 2012-02
- Publisher
- IEICE
- Citation
- IEICE Electronics Express, Feb 2012, 90(3), P.153-159
- Abstract
- A novel sensing algorithm for non-volatile Spin-Transfer Torque Magneto-resistive Random Access Memory (STT-MRAM) is presented. The dynamic reference sense amplifier (DRSA) improves sensing margin to achieve high reliability and sensitivity by increasing the difference of input voltages of sense amplifier. A dynamic reference sensing algorithm is proposed as a solution for the read margin loss due to variation in magnetic tunneling junction (MTJ) parameters of the STT-MRAM. The proposed sensing method was designed in standard 0.18 um process parameters, and simulation results indicate simultaneously increased the read margin compared with the conventional sensing method.
- URI
- https://www.jstage.jst.go.jp/article/elex/9/3/9_3_153/_article
- ISSN
- 1349-2543
- DOI
- 10.1587/elex.9.153
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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