Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process

Abstract

Thin film transistors (TFTs) utilizing TiInZnO (TIZO) channel layers with different Ti molar ratios were fabricated by using a solution process. X-ray photoelectron spectroscopy spectra for the TIZO film exhibited that the Ti 2p(1/2) peak intensity increased with increasing Ti molar ratio. The addition of the Ti atoms in the TIZO films changed their carrier concentration due to the decrease of O(2-) ions, resulting in a positive shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the TFTs with a 10% Ti molar ratio was as large as 0.21 x 10(7). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3655197]