N-Ion-implanted TiO2 photoanodes in quantum dot-sensitized solar cells
- Title
- N-Ion-implanted TiO2 photoanodes in quantum dot-sensitized solar cells
- Author
- 강용수
- Keywords
- TITANIUM-DIOXIDE; VISIBLE-LIGHT; THIN-FILMS; DYE; SEMICONDUCTOR; ELECTROLYTE; SURFACE; NANOMATERIALS; RECOMBINATION; ORIGIN
- Issue Date
- 2012-07
- Publisher
- ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
- Citation
- NANOSCALE; 2012, 4, 7, p2416-p2422
- Abstract
- Hierarchical nanostructured titanium dioxide (TiO2) clumps were fabricated using electrostatic spray with subsequent nitrogen-ion doping by an ion-implantation technique for improvement of energy conversion efficiency for quantum dot-sensitized solar cells (QDSCs). CdSe quantum dots were directly assembled on the produced N-ion-implanted TiO2 photoanodes by chemical bath deposition, and their photovoltaic performance was evaluated in a polysulfide electrolyte with a Pt counter electrode. We found that the photovoltaic performance of TiO2 electrodes was improved by nearly 145% upon N-ion implantation. The efficiency improvement seems to be due to (1) the enhancement of electron transport through the TiO2 layer by inter-particle necking of primary TiO2 particles and (2) an increase in the recombination resistance at TiO2/QD/electrolyte interfaces by healing the surface states or managing the oxygen vacancies upon N-ion doping. Therefore, N-ion-doped photoanodes offer a viable pathway to develop more efficient QD or dye-sensitized solar cells.
- URI
- http://pubs.rsc.org/en/results?artrefjournalname=NANOSCALE&artrefstartpage=2416&artrefvolumeyear=2012&fcategory=journalhttp://hdl.handle.net/20.500.11754/38031
- ISSN
- 2040-3364
- DOI
- 10.1039/c2nr11953f
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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