Effect of enhanced-mobility current path on the mobility of AOS TFT
- Title
- Effect of enhanced-mobility current path on the mobility of AOS TFT
- Author
- 최덕균
- Keywords
- AMORPHOUS OXIDE SEMICONDUCTORS; CARRIER TRANSPORT; TRANSPARENT; TECHNOLOGY
- Issue Date
- 2012-07
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
- Citation
- MICROELECTRONICS RELIABILITY, 권: 52, 호: 7, 페이지: 1346-1349
- Abstract
- In this study, the mobility enhancement in an Amorphous Oxide Semiconductor Thin Film Transistor (AOS TFT), particularly the effect of enhanced-mobility current path was investigated. In the TFT structure, the a-IGZO single active channel layer was replaced by double layers. Indium Tin Oxide (ITO) was employed as an enhanced-mobility current path material and was embedded in an amorphous Indium Gallium Zinc Oxide (a-IGZO) channel layer of a conventional bottom gate structure TFT. To analyze the effect of the length of an additional current path, the a-IGZO channel length was fixed at 80 mu m, and the length of the ITO enhanced-mobility current path was increased to 20, 40, and 60 mu m. As a result, the mobility increased monotonically with the length of the enhanced-mobility current path and was predictable from the rule of mixture. The maximum saturation mobility of 28.3 cm(2)/V s resulted when the length of the enhanced-mobility current path was 60 mu m. This value is more than double that of a single path TFT. Such enhancement in mobility is attributed to the high conductivity of ITO and a good conduction band match between a-IGZO and ITO. (C) 2012 Elsevier Ltd. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S0026271412000601?via%3Dihubhttp://hdl.handle.net/20.500.11754/37975
- ISSN
- 0026-2714
- DOI
- 10.1016/j.microrel.2012.02.012
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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