Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2018-02-15T13:31:34Z | - |
dc.date.available | 2018-02-15T13:31:34Z | - |
dc.date.issued | 2012-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS; FEB 2012, 51 2, 4p. | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1143/JJAP.51.02BA05/meta | - |
dc.description.abstract | We investigated thermally induced flatband voltage (V-FB) instabilities with single noble metals (Pt, Ir, Pd), their binary metal (IrPt) and control TiN used for gate electrodes in metal oxide semiconductor devices with atomic layer deposited HfO2 gate dielectric. As-deposited e-beam evaporated noble metals and sputtered TiN gated devices show near band-edge p-type metal-oxide-semiconductor (pMOS) characteristics and higher V-FB than midgap value, respectively. After 450 degrees C at 30 min forming gas anneal, V-FB of devices with e-beam evaporated single metals and sputtered TiN is substantially shifted toward mid-gap position, indicating thermally induced V-FB instability. However, device with binary metal alloy gate shows suppressed V-FB shifts and work-function as high as 4.95 eV is attained with 450 degrees C at 30 min FGA. It can be explained by oxygen diffusion within gate stack structure into interfacial layer (IL) between Si and HfO2 during anneal, leading to thicker IL and vacancy generation in dielectric. (C) 2012 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This research was supported by the IT R&D program of MKE/KEIT (10039174, Technology Development of 22 nm level Foundry Device and PDK). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND | en_US |
dc.title | Suppressed Thermally Induced Flatband Voltage Instabilities with Binary Noble Metal Gated Metal-Oxide-Semiconductor Capacitors | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 51 | - |
dc.identifier.doi | 10.1143/JJAP.51.02BA05 | - |
dc.relation.page | - | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Choi, Chang-hwan | - |
dc.contributor.googleauthor | Ahn, Jin-ho | - |
dc.contributor.googleauthor | Choi, Rino | - |
dc.relation.code | 2012217131 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.