Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 장재영 | - |
dc.date.accessioned | 2018-02-13T02:41:44Z | - |
dc.date.available | 2018-02-13T02:41:44Z | - |
dc.date.issued | 2016-03 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 8, NO 8, Page. 5499-5508 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://pubs.acs.org/doi/10.1021/acsami.6b00259 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/37013 | - |
dc.description.abstract | Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low voltage operation of the ZnO TFTs within +/- 3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution -processed and photopatterned ZnO TFTs. | en_US |
dc.description.sponsorship | This work was supported by a grant from the National Research Foundation of Korea (NRF), funded by the Korean Government (MSIP) (2014R1A2A1A05004993). This work was also supported by Basic Science Research Program through from the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A02062369). The authors thank the Pohang Accelerator Laboratory for providing access to the 4D and 5A beamlines used in this study. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | oxide thin-film transistors | en_US |
dc.subject | complementary inverters | en_US |
dc.subject | ZnO | en_US |
dc.subject | low-voltage operation | en_US |
dc.subject | zinc acrylate | en_US |
dc.subject | solution process | en_US |
dc.title | Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters | en_US |
dc.type | Article | en_US |
dc.relation.no | 8 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1021/acsami.6b00259 | - |
dc.relation.page | 5499-5508 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Jeong, Yong Jin | - |
dc.contributor.googleauthor | An, Tae Kyu | - |
dc.contributor.googleauthor | Yun, Don-Jin | - |
dc.contributor.googleauthor | Kim, Lae Ho | - |
dc.contributor.googleauthor | Park, Seonuk | - |
dc.contributor.googleauthor | Kim, Yebyeol | - |
dc.contributor.googleauthor | Nam, Sooji | - |
dc.contributor.googleauthor | Lee, Keun Hyung | - |
dc.contributor.googleauthor | Kim, Se Hyun | - |
dc.contributor.googleauthor | Jang, Jaeyoung | - |
dc.relation.code | 2016001740 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ENERGY ENGINEERING | - |
dc.identifier.pid | jyjang15 | - |
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