Atomic layer deposition coating of ZnO shell for GaN-ZnO core-sheath heteronanowires
- Title
- Atomic layer deposition coating of ZnO shell for GaN-ZnO core-sheath heteronanowires
- Author
- 김현우
- Keywords
- Nanostructures; Chemical synthesis; Transmission electron microscopy; ACCEPTOR PAIR RECOMBINATION; LIGHT-EMITTING-DIODES; OXYGEN VACANCIES; PHOTOLUMINESCENCE; LUMINESCENCE; NANOWIRES; GREEN; FABRICATION; DEFECTS
- Issue Date
- 2011-09
- Publisher
- ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
- Citation
- Applied Surface Science, Vol.257, No.22, p9420-9424
- Abstract
- We have synthesized GaN-core/ZnO-shell nanowires and investigated effects of the ZnO coating. The Xray diffraction pattern showed that as-synthesized samples are composed of GaN and ZnO. Transmission electron microscopy indicated that the deposited ZnO shell layer is poly-crystalline. The photoluminescence (PL) spectrum of GaN has been changed by the ZnO coating, where emission bands centered at roughly 1.9 eV, 2.5 eV, and 3.3 eV were newly added to the emissions from core GaN nanowires. We found that overall PL intensity has been significantly increased by coating the ZnO shell layers. (C) 2011 Elsevier B. V. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S0169433211008841?via%3Dihubhttp://hdl.handle.net/20.500.11754/36765
- ISSN
- 0169-4332
- DOI
- 10.1016/j.apsusc.2011.06.022
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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