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dc.contributor.author유창식-
dc.date.accessioned2018-02-12T01:41:14Z-
dc.date.available2018-02-12T01:41:14Z-
dc.date.issued2011-07-
dc.identifier.citationIEEE JOURNAL OF SOLID-STATE CIRCUITS, 권: 46, 호: 7, 페이지: 1648-1658 특별호: SIen_US
dc.identifier.issn0018-9200-
dc.identifier.urihttp://ieeexplore.ieee.org/document/5776717/-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/36507-
dc.description.abstractThis paper describes a fully integrated 130 nm CMOS 2x2 MIMO tri-band dual-mode transceiver for fixed and mobile WiMAX and IEEE 802.11a/b/g/n applications. The proposed transceiver features reduced RF interface (only 4 RF pins) with the wideband circuit topology of the LNA and drive amplifier that minimizes the performance degradation. With carefully chosen LO frequency planning, the transceiver is capable of operating at 2.3-2.7 GHz, 3.3-3.9 GHz, and as well as 5.1-5.9 GHz bands covering whole frequency spectrum of fixed and mobile WiMAX and WLAN. The measured noise figure of the receiver is 3.6-4.2, 4.2-4.7, and 5.4-6.2 dB for each 2/3/5 GHz bands respectively. The measured PLL phase noise from 1 kHz to 10 MHz is 0.5/0.8/0.95 rms degree for 2/3/5 GHz bands respectively. The transceiver ensures low EVM over the wide dynamic range due to linear RX and TX signal paths and low integrated PLL phase noise characteristics.en_US
dc.description.sponsorshipThis work was supported by the Center for Advanced Transceiver Systems, Seoul National University, Korea.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USAen_US
dc.subjectDirect-conversionen_US
dc.subjectIEEE 802.11a/b/g/nen_US
dc.subjectIEEE 802.16een_US
dc.subjectreceiveren_US
dc.subjectRF CMOSen_US
dc.subjectRF transceiveren_US
dc.subjectsynthesizeren_US
dc.subjecttransmitteren_US
dc.titleA 2x2 MIMO Tri-Band Dual-Mode Direct-Conversion CMOS Transceiver for Worldwide WiMAX/WLAN Applicationsen_US
dc.typeArticleen_US
dc.relation.volume46-
dc.identifier.doi10.1109/JSSC.2011.2144090-
dc.relation.page1648-1658-
dc.relation.journalIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.contributor.googleauthorLim, Kyoohyun-
dc.contributor.googleauthorMin, Sunki-
dc.contributor.googleauthorLee, Sanghoon-
dc.contributor.googleauthorPark, Jaewoo-
dc.contributor.googleauthorKang, Kisub-
dc.contributor.googleauthorShin, Hwahyeong-
dc.contributor.googleauthorShim, Hyunchul-
dc.contributor.googleauthorOh, Sechang-
dc.contributor.googleauthorKim, Sungho-
dc.contributor.googleauthorYoo, Changsik-
dc.relation.code2011203831-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidcsyoo-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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