Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film
- Title
- Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film
- Other Titles
- MgO(001) Thin Film
- Author
- 정용재
- Keywords
- Density functional theory; Fe/MgO(001); interface structure; perpendicular magnetic anisotropy
- Issue Date
- 2011-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
- Citation
- IEEE ELECTRON DEVICE LETTERS 권: 32 호: 9 페이지: 1287-1289
- Abstract
- Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 x 1) periodicity. The formation of the oxygen vacancies in c(2 x 1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.
- URI
- http://ieeexplore.ieee.org/document/5960764/
- ISSN
- 0741-3106; 1558-0563
- DOI
- 10.1109/LED.2011.2160148
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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