DESIGN AND ANALYSIS OF A COMPACT ULTRA-WIDEBAND CMOS LOW-NOISE AMPLIFIER

Abstract

In this letter, we proposed a low power, high gain, compact ultra-wideband (UWB) low noise amplifier (LNA) using TSMC 0.18-mu m CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized. The proposed UWB LNA has a voltage gain of 10.4-15.5 dB and a noise figure (NF) of 3.3-4.5 dB over the frequency band of interest (1-8 GHz). The total power consumption of the proposed UWB LNA is 10.4 mW from a 1.4 V supply voltage, and the chip area is 0.8 mm x 0.5 mm. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:345-348, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25747