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Epitaxial growth of GaN films on Cr-compound buffer layers by plasma assisted molecular beam epitaxy

Title
Epitaxial growth of GaN films on Cr-compound buffer layers by plasma assisted molecular beam epitaxy
Author
박진섭
Keywords
Buffer; CrN; Molecular beam epitaxy; Nitride
Issue Date
2011-04
Publisher
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Citation
In: Physica Status Solidi (C) Current Topics in Solid State Physics. (Physica Status Solidi (C) Current Topics in Solid State Physics, July 2011, 8(7-8):2013-2015)
URI
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000880/abstract?systemMessage=Please+be+advised+that+we+experienced+an+unexpected+issue+that+occurred+on+Saturday+and+Sunday+January+20th+and+21st+that+caused+the+site+to+be+down+for+an+extended+period+of+time+and+affected+the+ability+of+users+to+access+content+on+Wiley+Online+Library.+This+issue+has+now+been+fully+resolved.++We+apologize+for+any+inconvenience+this+may+have+caused+and+are+working+to+ensure+that+we+can+alert+you+immediately+of+any+unplanned+periods+of+downtime+or+disruption+in+the+future.
ISSN
1862-6351; 1610-1642
DOI
10.1002/pssc.201000880
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