Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 양성일 | - |
dc.date.accessioned | 2018-02-05T07:20:33Z | - |
dc.date.available | 2018-02-05T07:20:33Z | - |
dc.date.issued | 2015-01 | - |
dc.identifier.citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v. 25, No. 1, Page. 67-69 | en_US |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.issn | 1558-1764 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/abstract/document/6945911/ | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/35430 | - |
dc.description.abstract | This letter introduces an energy sensitive bandpass filter (ESBPF) to protect Ku-band low noise amplifiers (LNAs) from high power electromagnetic (HPEM) threats. The ESBPF circuit has anti-parallel Schottky Barrier diodes mounted on a planar bandpass filter (BPF) circuit. The ESBPF operates as a BPF at a power level below the maximum permissible power level (MPPL) of the LNAs. However, the circuit works like a variable attenuator at the power level equal to or higher than the MPPL of the LNAs. To increase attenuation and selectivity functions, a 63 degrees line section between two planar filter circuits loaded transversely along WR-75 waveguide has been inserted to cascade. The development of the circuit model has been started with lumped elements under the condition of a 0 dBm MPPL of LNA. Then, the model has been simulated, optimized with HFSS, and fabricated. Measurement results show that the ESBPF has insertion loss less than 1.27 dB at the power level lower than -2 dBm for the frequency range from 11.8 to 12.3 GHz. At the power level higher than -2 dBm, the circuit provides different levels of attenuation depending on the input power within the identical frequency band; 31 dB insertion loss, which provides isolation characteristic, has been measured at the power level of 30 dBm. | en_US |
dc.description.sponsorship | This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (20130782), and in part by the Mid-career Research Program (No. 2012-001327) through National Research Foundation (NRF) grant funded by the Korea government. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Energy sensitive bandpass filter (ESBPF); | en_US |
dc.subject | Ku band | en_US |
dc.subject | low noise amplifier (LNA) | en_US |
dc.subject | protection | en_US |
dc.subject | Schottky Barrier diode | en_US |
dc.title | Energy Sensitive Bandpass Filter to Protect Ku-Band LNAs from HPEM Threats | en_US |
dc.type | Article | en_US |
dc.relation.volume | 25 | - |
dc.identifier.doi | 10.1109/LMWC.2014.2365744 | - |
dc.relation.page | 67-69 | - |
dc.relation.journal | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.contributor.googleauthor | Jang, TH | - |
dc.contributor.googleauthor | Yang, SI | - |
dc.contributor.googleauthor | Arriola, WA | - |
dc.contributor.googleauthor | Kim, KH | - |
dc.contributor.googleauthor | Lee, JW | - |
dc.contributor.googleauthor | Kim, IS | - |
dc.relation.code | 2015001405 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | syang | - |
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