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dc.contributor.author박상규-
dc.date.accessioned2018-02-02T04:27:48Z-
dc.date.available2018-02-02T04:27:48Z-
dc.date.issued2011-04-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, Page. -en_US
dc.identifier.issn0021-4922-
dc.identifier.issn1347-4065-
dc.identifier.urihttp://iopscience.iop.org/article/10.1143/JJAP.50.03CC02/meta-
dc.description.abstractThe previous pixel-level digital-to-analog-conversion (DAC) scheme that implements a part of a DAC in a pixel circuit turned out to be very efficient for reducing the peripheral area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). However, how the pixel-level DAC can be compatible with the existing pixel circuits including compensation schemes of TFT variations and IR drops on supply rails, which is of primary importance for active matrix organic light emitting diodes (AMOLEDs) is an issue in this scheme, because LTPS TFTs suffer from random variations in their characteristics. In this paper, we show that the pixel-level DAC scheme can be successfully used with the previous compensation schemes by giving two examples of voltage-and current-programming pixels. The previous pixel-level DAC schemes require additional two TFTs and one capacitor, but for these newly proposed pixel circuits, the overhead is no more than two TFTs by utilizing the already existing capacitor. In addition, through a detailed analysis, it has been shown that the pixel-level DAC can be expanded to a 4-bit resolution, or be applied together with 1 : 2 demultiplexing driving for 6- to 8-in. diagonal XGA AMOLED display panels. (c) 2011 The Japan Society of Applied Physicsen_US
dc.description.sponsorshipThis work was supported by the IT R&D program of MKE/KEIT (KI002182, TFT backplane technology for next generation display).en_US
dc.language.isoenen_US
dc.publisherINST PURE APPLIED PHYSICSen_US
dc.subjectSI TFT-LCDen_US
dc.subjectPANELen_US
dc.subjectDISPLAYSen_US
dc.subjectDACen_US
dc.titlePixel-Level Digital-to-Analog Conversion Scheme with Compensation of Thin-Film-Transistor Variations for Compact Integrated Data Drivers of Active Matrix Organic Light Emitting Diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.03CC02-
dc.relation.page--
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorKim, TW-
dc.contributor.googleauthorPark, SG-
dc.contributor.googleauthorChoi, BD-
dc.relation.code2011217131-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidsanggyu-
dc.identifier.orcidhttp://orcid.org/0000-0002-6051-0163-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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