Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2018-01-10T00:53:58Z | - |
dc.date.available | 2018-01-10T00:53:58Z | - |
dc.date.issued | 2016-03 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v. 52, NO 7, Page. 531-532 | en_US |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.issn | 1350-911X | - |
dc.identifier.uri | http://digital-library.theiet.org/content/journals/10.1049/el.2015.4299 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/34282 | - |
dc.description.abstract | The stress-induced resistance drift in MgO-based magnetic tunnel junctions (MTJs) with Mg insertion layer above and below a MgO tunnel barrier is investigated. Mg insertion suppresses the resistance drift. Resistance drift characteristics are improved when electrons tunnel into the Mg-inserted barrier-electrode interface, indicating that Mg insertion significantly suppresses trap site formation at the anode-side barrier-electrode interface. However, transmission electron microscopy images confirm that there is little difference in interface crystallinity between the Mg-inserted and non-inserted interfaces. Therefore, it is shown that a slight modification of the barrier-electrode interface states has a significant impact on resistance drift characteristics, and Mg insertion on both interface sides appears to be an effective way to improve MTJ device reliability in practical applications. | en_US |
dc.description.sponsorship | This research was supported by the MOTIE (Ministry of Trade, Industry and Energy, 10044608) and KSRC (Korea Semiconductor Research Consortium) support program for the development for the future semiconductor device, and also supported by IBS (Institute for Basic Science, IBS-R004-G3). | en_US |
dc.language.iso | en | en_US |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | en_US |
dc.subject | MEMORY | en_US |
dc.title | Effect of Mg insertion on stress-induced resistance drift in MgO-based magnetic tunnel junctions | en_US |
dc.type | Article | en_US |
dc.relation.no | 7 | - |
dc.relation.volume | 52 | - |
dc.identifier.doi | 10.1049/el.2015.4299 | - |
dc.relation.page | 531-532 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.contributor.googleauthor | Choi, C. M. | - |
dc.contributor.googleauthor | Oh, Y. T. | - |
dc.contributor.googleauthor | Lee, J. Y. | - |
dc.contributor.googleauthor | Sukegawa, H. | - |
dc.contributor.googleauthor | Mitani, S. | - |
dc.contributor.googleauthor | Song, Y. H. | - |
dc.relation.code | 2016001165 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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