One-dimensional InGaZnO Field-effect Transistor on a Polyimide Wire Substrate for an Electronic Textile
- Title
- One-dimensional InGaZnO Field-effect Transistor on a Polyimide Wire Substrate for an Electronic Textile
- Author
- 상병인
- Keywords
- InGaZnO; Electronic textiles; 1-D field-effect transistor; Resistive-load inverter
- Issue Date
- 2016-02
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 68, NO 4, Page. 599-603
- Abstract
- Amorphous InGaZnO (IGZO) is a promising semiconducting material to replace amorphous and polycrystalline Si. IGZO-based field-effect transistors (FET) can be versatile platforms for various electronic or optoelectronic applications. Here, we report on a one-dimensional (1-D) IGZO FET fabricated on a flexible polyimide wire substrate for electronic textiles (e-textiles). This flexible 1-D IGZO FET shows a high mobility of 18.18 cm(2)/Vs with a relatively good on/off current ratio of 10(4) at operating voltages below 5 V. Furthermore, a resistive-load inverter is implemented by connecting the 1-D IGZO FET to an external load resistor. Such an inverter exhibits obvious voltage switching characteristics, verifying the potential it is being a basic building block for an e-textile circuit system.
- URI
- https://link.springer.com/article/10.3938%2Fjkps.68.599http://hdl.handle.net/20.500.11754/34081
- ISSN
- 0374-4884; 1976-8524
- DOI
- 10.3938/jkps.68.599
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > CHEMICAL ENGINEERING(화학공학과) > Articles
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