Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2017-12-12T00:08:55Z | - |
dc.date.available | 2017-12-12T00:08:55Z | - |
dc.date.issued | 2016-02 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO 2, Page. 1685-1688 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000002/art00076 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/34068 | - |
dc.description.abstract | Nonvolatile memory devices based on a polydopamine (PDA) layer were fabricated by using a dip-coating process. Atomic force microscopy images revealed that the PDA layer had a conformal surface. The energy dispersive X-ray data showed the atomic stoichiometry of nitrogen and carbon in the PDA layer. The capacitance-voltage (C-V) curves of the Al/PDA/n-Si memory devices at 300 K showed a hysteresis with a large flat band shift, indicating that the incomplete PDA layer acted as a charge storage in the memory device. The switching mechanisms for the writing and erasing processes for the Al/PDA/n-Si devices are described on the basis of the C-V results and the energy band diagrams. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013R1A2A1A01016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Nonvolatile Memory Device | en_US |
dc.subject | Polydopamine | en_US |
dc.subject | Switching Mechanism | en_US |
dc.subject | Capacitance-Voltage | en_US |
dc.title | Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 16 | - |
dc.identifier.doi | 10.1166/jnn.2016.11967 | - |
dc.relation.page | 1685-1688 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Yang, Hee Yeon | - |
dc.contributor.googleauthor | Yun, Dong Yeol | - |
dc.contributor.googleauthor | Kim, Yu Na | - |
dc.contributor.googleauthor | Hong, Jae-Min | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2016003411 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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