Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bukhvalov, Danil | - |
dc.date.accessioned | 2017-11-28T02:23:05Z | - |
dc.date.available | 2017-11-28T02:23:05Z | - |
dc.date.issued | 2016-02 | - |
dc.identifier.citation | JOURNAL OF NON-CRYSTALLINE SOLIDS, v. 432, Page. 183-188 | en_US |
dc.identifier.issn | 0022-3093 | - |
dc.identifier.issn | 1873-4812 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0022309315302064?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/31903 | - |
dc.description.abstract | The results of XPS core-level and valence band measurements, photoluminescence spectra of a-SiO2 implanted by Zn-ions (E = 30 key, D = 1 . 10(17) cm(-2)) and Density Functional Theory calculations of electronic structure as well as formation energies of structural defects in silica glass induced by Zn-ion implantation are presented. Both theory and experiment show that it is energetically more favorable for implanted zinc ions to occupy the interstitial positions instead of cation substitution. As a result, the Zn-ions embedded to interstitials, form chemical bonds with the surrounding oxygen atoms, fabrication ZnO-like nanoparticles and oxygen-deficient SiOx matrix. The subsequent thermal annealing at 900 degrees C (1 h) strongly reduces the amount of ZnO nanoparticles and induces the formation of secondary alpha-Zn2SiO4 phase which markedly enhances the green emission. (C) 2015 Published by Elsevier B.V. | en_US |
dc.description.sponsorship | The preparation of a-SiO<INF>2</INF> samples, ion-implantation treatment and photoluminescence measurements were supported by the Act 211 of the Government of Russian Federation (Contract No 02.A03.21.0006), Russian Foundation for Basic Research (Projects RFBR Nos. 13-08-00568 and 13-02-91333) and the Government Assignment of Russian Ministry of Education and Science (3.1016.2014/K). The XPS measurements and DFT calculations were supported by Russian Science Foundation (Project No. 14-22-00004). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Phase transition | en_US |
dc.subject | Spectroscopy | en_US |
dc.subject | DFT modeling | en_US |
dc.subject | Doping | en_US |
dc.title | Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing | en_US |
dc.type | Article | en_US |
dc.relation.volume | 432 | - |
dc.identifier.doi | 10.1016/j.jnoncrysol.2015.10.002 | - |
dc.relation.page | 183-188 | - |
dc.relation.journal | JOURNAL OF NON-CRYSTALLINE SOLIDS | - |
dc.contributor.googleauthor | Zatsepin, D. A. | - |
dc.contributor.googleauthor | Zatsepin, A. F. | - |
dc.contributor.googleauthor | Boukhvalov, D. W. | - |
dc.contributor.googleauthor | Kurmaev, E. Z. | - |
dc.contributor.googleauthor | Pchelkina, Zv | - |
dc.contributor.googleauthor | Gavrilov, N. V. | - |
dc.relation.code | 2016000347 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF CHEMISTRY | - |
dc.identifier.pid | danil | - |
dc.identifier.researcherID | F-7517-2017 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.